GF4420

The GF4420 is designed as one kind of N-channel enhancement mode MOSFETs with Vds of 30V and Id of 12.5A.

GF4420 has four features. (1)Advanced trench process technology. (2)High density cell design for ultra low on-resistance. (3)Specially designed for low voltage DC/DC converters. (4)Fast switching for high efficiency. Those are all the main features.

Some absolute maximum ratings and thermal characteristics of GF4420 have been concluded into several points as follow. (1)Its drain to source voltage would be 30V. (2)Its gate to source voltage would be +/-20V. (3)Its continuous drain current would be 12.5A at Ta=25°C and would be 10A at Ta=70°C. (4)Its pulsed drain current would be +/-50A. (5)Its continuous source current diode conduction would be 2.3A. (6)Its maximum power dissipation would be 2.5W at Ta=25°C and would be 1.6W at Ta=70°C. (7)Its operating junction and storage temperature range would be from -55°C to 150°C. (8)Its maximum junction to ambient thermal resistance would be 50°C/W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GF4420 are concluded as follow. (1)Its drain to source breakdown voltage would be min 30V. (2)Its gate threshold voltage would be min 1.0V and max 3.0V. (3)Its gate to body leakage would be max +/-100nA. (4)Its zero gate voltage drain current would be max 1uA  and it would be max 5uA at Tj=55°C. (5)Its on-state drain current would be min 30A. (6)Its drain to source on-state resistance would be typ 7mohms and max 9mohms with conditions of Vgs=10V and Id=12.5A and would be typ 9.5mohms and max 13mohms with conditions of Vgs=4.5V and Id=10.5A. (7)Its forward transconductance would be typ 50S. And so on. If you have any question or suggestion or want to know more information about GF4420 please visit our website and contact us for details. Thank you!