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GBJ25D

Features: * Internal Constructure with GPRC (Glass Passivated Rectifier Chip) inside* High Case Dielectric Strength of 1500VRMS* Low Reverse Leakage Current* High Surge Current Capability* Ideal for Printed Circuit Board Applications* Plastic Material-UL Recognition Flammability Classification 94V...

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SeekIC No. : 004349637 Detail

GBJ25D: Features: * Internal Constructure with GPRC (Glass Passivated Rectifier Chip) inside* High Case Dielectric Strength of 1500VRMS* Low Reverse Leakage Current* High Surge Current Capability* Ideal for...

GBJ25D Data Sheet

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Part Number:
GBJ25D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

* Internal Constructure with GPRC (Glass Passivated Rectifier Chip) inside
* High Case Dielectric Strength of 1500VRMS
* Low Reverse Leakage Current
* High Surge Current Capability
* Ideal for Printed Circuit Board Applications
* Plastic Material-UL Recognition Flammability Classification 94V-0* Internal Constructure with GPRC (Glass Passivated
   Rectifier Chip) inside
* High Case Dielectric Strength of 1500VRMS
* Low Reverse Leakage Current
* High Surge Current Capability
* Ideal for Printed Circuit Board Applications
* Plastic Material-UL Recognition Flammability Classification 94V-0


Specifications

Ratings at 25 oC ambient temperature
unless otherwise specified.
SYMBOLS

GBJ25A
GBJ25B
GBJ25D
GBJ25G
GBJ25J
GBJ25K
GBJ25M
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum average forward (with heatsink Note 2) rectified
current at TC=100oC
I (AV)
25
Amps
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
350
Amps
Maximum instantaneous forward voltage @ IF=12.5 A
VF
1.05
Volts
Maximum DC reverse current@TC=25oC
at rated DC blocking voltage@TC=125oC
IR
10
500
uA
I2t rating for fusing ( t < 8.3ms )
CJ
510
pF
Typical junction capacitance per element (NOTE 1)
R JC
85
A2s
Typical thermal resistance (NOTE 2)
TJ,TSTG
0.6
K / W
Operating junction and storage temperature range
I2t
-55 to +175
oC
NOTES : (1)Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
              (2) Device mounted on 300 x 300 x 1.6mm Cu Plate Heatsink.


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