GB30XF60K

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Configuration : Hex
Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Package / Case : Econo 2
Continuous Collector Current at 25 C : 50 A
Packaging : Bulk


Description

The GB30XF60K is designed as one kind of IGBT sixpack modules with current of 35A. GB30XF60K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, direct mounting to heatsink, PCB solderable terminals and low junction to case thermal resistance.

GB30XF60K has eleven features. (1)Low diode Vf. (2)10s short circuit capability. (3)Square RBSOA. (4)Low Vce(on) non punch through IGBT technology. (5)HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics. (6)Positive Vce(on) temperature coefficient. (7)Ceramic DBC substrate. (8)Low stray inductance design. (9)Speed 8 to 60kHz. (10)Totally lead (Pb)-free. (11)Designed and qualified for industrial market. Those are all the main features.

Some absolute maximum ratings of GB30XF60K have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 50A at Tc=25°C and would be 35A at Tc=80°C. (3)Its pulsed collector current see fig. C.T.5 would be 100A. (4)Its clamped inductive load current would be 100A. (5)Its diode continuous forward current would be 50A at Tc=25°C and would be 35A at Tc=80°C. (6)Its diode maximum forward current would be 100A. (7)Its gate to emitter voltage would be +/-20V. (8)Its maximum power dissipation (IGBT and diode) would be 215W at Tc=25°C and would be 120W at Tc=80°C. (9)Its maximum operating junction temperature would be 150°C. (10)Its storage temperature range would be from -40°C to +125°C. (11)Its isolation voltage would be AC 2500V (minimum). It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB30XF60K are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coefficient of breakdown voltage would be typ 0.7V/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about GB30XF60K please contact us for details. Thank you!