GB25XF120K

IGBT Modules 40 Amp 1200 Volt Non-Punch Through

product image

GB25XF120K Picture
SeekIC No. : 00142098 Detail

GB25XF120K: IGBT Modules 40 Amp 1200 Volt Non-Punch Through

floor Price/Ceiling Price

Part Number:
GB25XF120K
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Hex
Collector- Emitter Voltage VCEO Max : 1200 V Continuous Collector Current at 25 C : 40 A
Maximum Operating Temperature : + 150 C Package / Case : Econo 2
Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Package / Case : Econo 2
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 40 A
Packaging : Bulk


Features:

• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design



Specifications

Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
1200
V
IC @ TC = 25
Continuous Collector Current
40
A
IC @ TC = 80
Continuous Collector Current
25
ICM
Pulsed Collector Current(Ref.Fig.C.T.5)
80
ILM
Clamped Inductive Load current
80
IF @ TC = 25 Diode Continuous Forward Current
40
IF @ TC = 80 Diode Continuous Forward Current
25
IFM Diode Maximum Forward Current
80
VGE
Gate-to-Emitter Voltage
±20
V
PD @ TC = 25
Maximum Power Dissipation
198
W
PD @ TC = 100
Maximum Power Dissipation
111
TJ
Maximum Operating Junction Temperature
150
TSTG
Storage Temperature Range
-40 to +125
VISOL Isolation Voltage
AC 2500 (1min)
V



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cables, Wires - Management
Soldering, Desoldering, Rework Products
Batteries, Chargers, Holders
Inductors, Coils, Chokes
Semiconductor Modules
View more