IGBT Modules 40 Amp 1200 Volt Non-Punch Through
GB25XF120K: IGBT Modules 40 Amp 1200 Volt Non-Punch Through
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Product : | IGBT Silicon Modules | Configuration : | Hex |
Collector- Emitter Voltage VCEO Max : | 1200 V | Continuous Collector Current at 25 C : | 40 A |
Maximum Operating Temperature : | + 150 C | Package / Case : | Econo 2 |
Packaging : | Bulk |
Parameter |
Max. |
Units | |
VCES |
Collector-to-Emitter Breakdown Voltage |
1200 |
V |
IC @ TC = 25 |
Continuous Collector Current |
40 |
A |
IC @ TC = 80 |
Continuous Collector Current |
25 | |
ICM |
Pulsed Collector Current(Ref.Fig.C.T.5) |
80 | |
ILM |
Clamped Inductive Load current |
80 | |
IF @ TC = 25 | Diode Continuous Forward Current |
40 | |
IF @ TC = 80 | Diode Continuous Forward Current |
25 | |
IFM | Diode Maximum Forward Current |
80 | |
VGE |
Gate-to-Emitter Voltage |
±20 |
V |
PD @ TC = 25 |
Maximum Power Dissipation |
198 |
W |
PD @ TC = 100 |
Maximum Power Dissipation |
111 | |
TJ |
Maximum Operating Junction Temperature |
150 |
|
TSTG |
Storage Temperature Range |
-40 to +125 | |
VISOL | Isolation Voltage |
AC 2500 (1min) |
V |