GB25XF120K Selling Leads, Price trend , Vishay Semiconductors, GB25XF120K DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00142098 Detail

GB25XF120K: IGBT Modules 40 Amp 1200 Volt Non-Punch Through

GB25XF120K Data Sheet

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Part Number:: GB25XF120K
Mfg:: Vishay Semiconductors
Supply Ability:: 5000

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Upload time: 2024/7/15

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Product Details

Quick Details

Product :	IGBT Silicon Modules	Configuration :	Hex
Collector- Emitter Voltage VCEO Max :	1200 V	Continuous Collector Current at 25 C :	40 A
Maximum Operating Temperature :	+ 150 C	Package / Case :	Econo 2
Packaging :	Bulk

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Package / Case : Econo 2
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 40 A
Packaging : Bulk

Features:

• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design

Specifications

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	1200	V
I_C@ T_C = 25	Continuous Collector Current	40	A
I_C @ T_C = 80	Continuous Collector Current	25
I_CM	Pulsed Collector Current(Ref.Fig.C.T.5)	80
I_LM	Clamped Inductive Load current	80
I_F @ T_C = 25	Diode Continuous Forward Current	40
I_F @ T_C = 80	Diode Continuous Forward Current	25
I_FM	Diode Maximum Forward Current	80
V_GE	Gate-to-Emitter Voltage	±20	V
P_D @ T_C = 25	Maximum Power Dissipation	198	W
P_D @ T_C = 100	Maximum Power Dissipation	111	W
T_J	Maximum Operating Junction Temperature	150
T_STG	Storage Temperature Range	-40 to +125
V_ISOL	Isolation Voltage	AC 2500 (1min)	V

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GB25XF120K

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