GB25RF120K

IGBT Modules 40 Amp 1200 Volt Non-Punch Through

product image

GB25RF120K Picture
SeekIC No. : 00142104 Detail

GB25RF120K: IGBT Modules 40 Amp 1200 Volt Non-Punch Through

floor Price/Ceiling Price

Part Number:
GB25RF120K
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/20

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Array 7
Collector- Emitter Voltage VCEO Max : 1200 V Continuous Collector Current at 25 C : 40 A
Maximum Operating Temperature : + 150 C Package / Case : Econo 2
Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Product : IGBT Silicon Modules
Configuration : Array 7
Maximum Operating Temperature : + 150 C
Package / Case : Econo 2
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 40 A
Packaging : Bulk


Features:

• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design



Specifications

Parameter
Symbol
Test Conditions
Ratings
Units
Inverter
Collector-to-Emitter Voltage
VCES
V
Gate-to-Emitter Voltage
VGES
±20
Collector Current
IC
Continuous
25 / 80
40 / 25
A
ICM
25
80
Diode Maximum Forward Current
IFM
25
80
Power Dissipation
PD
1 device
25
198
W
Input
Rectifier
Repetitive Peak Reverse Voltage
VRRM
1600
V
Average Output Current
IF(AV)
50/60Hz sine pulse
80
20
A
Surge Current (Non Repetitive)
IFSM
Rated VRRM applied, 10ms,
sine pulse
250
I2t (Non Repetitive)
I2t
216
A2s
Brake
Collector-to-Emitter Voltage
VCES
1200
V
Gate-to-Emitter Voltage
VGES
±20
Collector Current
IC
Continuous
25 / 80
25 / 15
A
ICM
25
50
Power Dissipation
PD
1 device
25
104
W
Repetitive Peak Reverse Voltage
VRRM
1200
V
  Maximum Operating Junction Temperature
TJ
-
-
150
Storage Temperature Range
TSTG
-
-
-40 to +125
Isolation Voltage
VISOL
AC(1min.)
2500
V
Maximum Power Dissipation



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Audio Products
Test Equipment
Fans, Thermal Management
Connectors, Interconnects
Circuit Protection
Integrated Circuits (ICs)
View more