IGBT Modules 40 Amp 1200 Volt Non-Punch Through
GB25RF120K: IGBT Modules 40 Amp 1200 Volt Non-Punch Through
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Product : | IGBT Silicon Modules | Configuration : | Array 7 |
Collector- Emitter Voltage VCEO Max : | 1200 V | Continuous Collector Current at 25 C : | 40 A |
Maximum Operating Temperature : | + 150 C | Package / Case : | Econo 2 |
Packaging : | Bulk |
Parameter |
Symbol |
Test Conditions |
Ratings |
Units | ||
Inverter |
Collector-to-Emitter Voltage |
VCES |
V | |||
Gate-to-Emitter Voltage |
VGES |
±20 |
||||
Collector Current |
IC |
Continuous |
25 / 80 |
40 / 25 |
A | |
ICM |
25 |
80 | ||||
Diode Maximum Forward Current |
IFM |
25 |
80 | |||
Power Dissipation |
PD |
1 device |
25 |
198 |
W | |
Input Rectifier |
Repetitive Peak Reverse Voltage |
VRRM |
1600 |
V | ||
Average Output Current |
IF(AV) |
50/60Hz sine pulse |
80 |
20 |
A | |
Surge Current (Non Repetitive) |
IFSM |
Rated VRRM applied, 10ms, sine pulse |
250 | |||
I2t (Non Repetitive) |
I2t |
216 |
A2s | |||
Brake |
Collector-to-Emitter Voltage |
VCES |
1200 |
V | ||
Gate-to-Emitter Voltage |
VGES |
±20 | ||||
Collector Current |
IC |
Continuous |
25 / 80 |
25 / 15 |
A | |
ICM |
25 |
50 | ||||
Power Dissipation |
PD |
1 device |
25 |
104 |
W | |
Repetitive Peak Reverse Voltage |
VRRM |
1200 |
V | |||
Maximum Operating Junction Temperature |
TJ |
- |
- |
150 |
||
Storage Temperature Range |
TSTG |
- |
- |
-40 to +125 | ||
Isolation Voltage |
VISOL |
AC(1min.) |
2500 |
V | ||
Maximum Power Dissipation |