GB10RF60K

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Configuration : Array 7
Maximum Operating Temperature : + 150 C
Package / Case : Econo 2
Continuous Collector Current at 25 C : 20 A
Packaging : Bulk


Description

The GB10RF60K is designed asone kind of IGBT PIM modules with current of 12A. GB10RF60K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, direct mounting to heatsink, PCB solderable terminals, low junction to case thermal resistance and UL approved E78996.

GB10RF60K has eleven features. (1)Low Vce(on) non punch through IGBT technology. (2)Low diode Vf. (3)10s short circuit capability. (4)Square RBSOA. (5)HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics. (6)Positive Vce(on) temperature coefficient. (7)Ceramic DBC substrate. (8)Low stray inductance design. (9)Speed 8 to 60kHz. (10)Totally lead (Pb)-free. (11)Designed and qualified for industrial market. Those are all the main features.

Some absolute maximum ratings of GB10RF60K have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its gate to emitter voltage would be +/-20V. (3)Its continuous collector current would be 20A at Tc=25°C and would be 12A at Tc=80°C. (4)Its pulsed collector current see fig. C.T.5 would be 40A. (5)Its diode maximum forward current would be 40A. (6)Its power dissipation would be 100W. (7)Its repetitive peak reverse voltage would be 800V. (8)Its average output current would be 10A. (9)Its surge current (non-repetitive) would be 310A. (10)Its I2t (non-repetitive) would be 525A2s. (11)Its maximum operating junction temperature would be 150°C. (12)Its storage temperature range would be from -40°C to +125°C. (13)Its isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB10RF60K are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coefficient of breakdown voltage would be typ 0.25V/°C. (3)Its gate threshold voltage would be min 4V and max 6V. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about GB10RF60K please contact us for details. Thank you!