IGBT Modules 20 Amp 1200 Volt Non-Punch Through
GB10RF120K: IGBT Modules 20 Amp 1200 Volt Non-Punch Through
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DescriptionThe GB100DA60UP si designed as one kind of insulated gate bipolar transistors (warp 2 s...
DescriptionThe GB100TS60NPbF is designed as one kind of INT-A-PAK half-bridges (ultrafast speed ...
Product : | IGBT Silicon Modules | Configuration : | Array 7 |
Collector- Emitter Voltage VCEO Max : | 1200 V | Continuous Collector Current at 25 C : | 20 A |
Maximum Operating Temperature : | + 150 C | Package / Case : | Econo 2 |
Packaging : | Bulk |