Features: • Generation 4 IGBT technology• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Very low conduction and switching losses• HEXFRED™antiparallel diodes with ultra- soft recovery• Industry stan...
GA300TD60U: Features: • Generation 4 IGBT technology• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Very low conduction and swit...
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Parameter | Max. | Units | |
VCES | Collector-to-Emitter Breakdown Voltage | 600 | V |
IC @ TC=25°C | Continuous Collector Current | 300 | A |
ICM | Pulsed Collector Current | 600 | |
ILM | Clamped Inductive Load Current | 600 | |
IFM | Peak Diode Forward Current | 600 | |
VGE | Gate-to-Emitter Voltage | ± 20 | V |
EARV | Reverse Voltage Avalanche Energy | 155 | mJ |
VISOL | RMS Isolation Voltage, Any Terminal to Case, t=1 min | 2500 | V |
PD @ TC=25°C | Maximum Power Dissipation | 880 | W |
PD @ TC=85°C | Maximum Power Dissipation |
460 | |
TJ | Operating Junction | -40 to + 150 | °C |
TSTG | Storage Temperature Range | -40 to + 125 |