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GA150TD120U

Features: • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz• Very low conduction and switching losses• HEXFRED™ antiparallel diodes with ultra- soft recovery• Industry standard package• UL approved• Generation 4 IGB...

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GA150TD120U: Features: • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz• Very low conduction and switching losses• HEXFRED™ antiparallel diodes w...

GA150TD120U Data Sheet

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Part Number:
GA150TD120U
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

• Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology


Application

• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
1200
V
IC @ TC = 25°C Continuous Collector Current
150
A
ICM Pulsed Collector CurrentÅ
300
ILM Peak Switching CurrentÇ
300
IFM Peak Diode Forward Current
300
VGE Gate-to-Emitter Voltage
±20
V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD @ TC = 25°C Maximum Power Dissipation
780
W
PD @ TC = 85°C Maximum Power Dissipation
406
TJ Operating Junction Temperature Range
-40to+150
°C
TSTG Storage Temperature Range
-40to+125



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