Features: • Generation 4 Standard Speed IGBT Technology• QuietIR Antiparallel diodes with Fast Soft recovery• Very Low Conduction Losses• Industry Standard Package• Aluminum Nitride DBC• UL approved (file E78996)Specifications Parameter Max. Units ...
GA100TS60SQ: Features: • Generation 4 Standard Speed IGBT Technology• QuietIR Antiparallel diodes with Fast Soft recovery• Very Low Conduction Losses• Industry Standard Package• Alu...
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DescriptionThe GA100TS120UPbF is designed as one kind of half-bridge IGBT INT-A-PAKs (ultrafast ...
DescriptionThe GA100TS60SFPbF is designed as one kind of half-bridge IGBT INT-A-PAKs (standard s...
Parameter |
Max. |
Units | ||
VCES |
Collector-to-Emitter Voltage |
600 |
V | |
IC |
Continuous Collector Current |
@ TC = 25 |
220 |
A |
@ TC = 130 |
100 | |||
ICM |
Pulsed Collector Current |
440 | ||
ILM |
Peak Switching Current |
440 | ||
VGE |
Gate-to-Emitter Voltage |
±20 |
V | |
VISOL | RMS Isolation Voltage, Any Terminal To Case, t = 1 min |
2500 | ||
PD |
Maximum Power Dissipation |
@ TC = 25 |
780 |
W |
@ TC = 100 |
312 |