DescriptionThe GA100TS60SFPbF is designed as one kind of half-bridge IGBT INT-A-PAKs (standard speed IGBT) with current of 100A. GA100TS60SFPbF's benefits include optimized for high current inverter stages (AC TIG welding machines), direct mounting to heatsink, very low junction to case thermal ...
GA100TS60SFPbF: DescriptionThe GA100TS60SFPbF is designed as one kind of half-bridge IGBT INT-A-PAKs (standard speed IGBT) with current of 100A. GA100TS60SFPbF's benefits include optimized for high current invert...
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Board Mount Pressure / Force Sensors 0-10" WATER 0.5-4.5V
The GA100TS60SFPbF is designed as one kind of "half-bridge" IGBT INT-A-PAKs (standard speed IGBT) with current of 100A. GA100TS60SFPbF's benefits include optimized for high current inverter stages (AC TIG welding machines), direct mounting to heatsink, very low junction to case thermal resistance and low EMI.
GA100TS60SFPbF has eight features. (1)Standard speed PT IGBT technology. (2)Standard speed: DC to 1kHz, optimized for hard switching speed. (3)FRED Pt antiparallel diodes with fast recovery. (4)Very low conduction losses. (5)Al2O3 DBC. (6)UL approved file E78996. (7)Compliant to RoHS directive 2002/95/EC. (8)Designed for industrial level. Those are all the main features.
Some absolute maximum ratings of GA100TS60SFPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 220A at Tc=25°C and would be 100A at Tc=130°C. (3)Its pulsed collector current would be 440A. (4)Its peak switching current would be 440A. (5)Its gate to emitter voltage would be +/-20V. (6)Its RMS isolation voltage would be 2500V. (7)Its maximum power dissipation would be 780W at Tc=25°C and would be 312W at Tc=100°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of GA100TS60SFPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its gate threshold voltage would be min 3V and max 6V. (3)Its collector to emitter leakage current would be max 1mA at Vge=0V, Vce=600V and would be max 10mA at Vge=0V, Vce=600V, Tj=125°C. (4)Its gate to emitter leakage current would be max +/-250nA. (5)Its diode forward voltage drop would be typ 1.44V, max 1.96V at Ic=100A, Vge=0V and would be typ 1.25V, max 1.54V at Ic=100A, Vge=0V, Tj=125°C. At present we have not got so much information about this IC and we would try hard to get more information about GA100TS60SFPbF. If you have any question or suggestion or want to know more information please contact us for details. Thank you!