DescriptionThe GA100TS120UPbF is designed as one kind of half-bridge IGBT INT-A-PAKs (ultrafast speed IGBT) with current of 100A. GA100TS120UPbF's benefits include increased operating efficienc, direct mounting to heatsink, performance optimized for power conversion: UPS, SMPS, welding and lower...
GA100TS120UPbF: DescriptionThe GA100TS120UPbF is designed as one kind of half-bridge IGBT INT-A-PAKs (ultrafast speed IGBT) with current of 100A. GA100TS120UPbF's benefits include increased operating efficienc, d...
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The GA100TS120UPbF is designed as one kind of "half-bridge" IGBT INT-A-PAKs (ultrafast speed IGBT) with current of 100A. GA100TS120UPbF's benefits include increased operating efficienc, direct mounting to heatsink, performance optimized for power conversion: UPS, SMPS, welding and lower EMI, requires less snubbing.
GA100TS120UPbF has eight features. (1)Generation 4 IGBT technology. (2)Ultrafast: optimized for high speed 8kHz to 40kHz in hard switching,> 200kHz in resonant mode. (3)Very low conduction and switching losses. (4)HEXFRED antiparallel diodes with ultrasoft recovery. (5)Industry standard package. (6)UL approved file E78996. (7)Compliant to RoHS directive 2002/95/EC. (8)Designed and qualified for industrial level. Those are all the main features.
Some absolute maximum ratings of GA100TS120UPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 182A at Tc=25°C and would be 100A at Tc=93°C. (3)Its pulsed collector current would be 200A. (4)Its peak switching current see fig. 17 would be 200A. (5)Its peak diode forward current would be 200A. (6)Its gate to emitter voltage would be +/-20V. (7)Its RMS isolation voltage would be 2500V. (8)Its maximum power dissipation would be 520W at Tc=25°C and would be 270W at Tc=85°C. (9)Its operating junction temperature range would be from -40°C to 150°C. (10)Its storage temperature range would be from -40°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of GA100TS120UPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its gate threshold voltage would be min 3.0V, typ 4.4V and max 6.0V. (3)Its temperature coefficient of threshold voltage would be typ -12mV/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about GA100TS120UPbF please contact us for details. Thank you!