Features: · Wide dynamic range· Low noise and low dark current· Selectable gain· Anti-saturation circuit· CDS circuit *1· Offset compensation circuit· Simple operation (by built-in timing generator) *2· High resolution: 25 µm pitch (512 ch)·Low cross-talk· 256 ch: 1 video line 512 ch: 2 vide...
G9211: Features: · Wide dynamic range· Low noise and low dark current· Selectable gain· Anti-saturation circuit· CDS circuit *1· Offset compensation circuit· Simple operation (by built-in timing generator)...
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Parameter |
Symbol |
Value |
Unit |
Clock pulse voltage |
V |
5.5 |
V |
Operating temperature *1 |
Topr |
-40 to +70 |
|
Storage temperature *1 |
Tstg |
-40 to +85 |
G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. G9211 to G9214/G9205 to G9208 series consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is hermetically sealed for high reliability.
Signal processing circuits of G9211 to G9214/G9205 to G9208 series on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by using an external voltage input. The image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.