G9015

      G9015 is a kind of PNP epitaxial planar transistor.It is designed for use in pre-amplifier of low level and low noise.
      Here you can get some information about the absolute maximum ratings at Ta = 25 of G9015.The Junction Temperature (Tj) is +150.The Storage Temperature (Tstg) is from -55 to +150.The Collector to Base Voltage (VCBO) is -50 V.The Collector to Emitter Voltage (VCEO) is -45 V.The Emitter to Base Voltage (VEBO) is -5 V.The Collector Current (IC) is -100 mA.The Total Power Dissipation (PD) is 450 mW.
      What comes next is about the characteristics at Ta = 25 of G9015.The minimum BVCBO is -50 V at IC=-100uA , IE=0.The minimum BVCEO is -45 V at IC=-1mA, IB=0.The minimum BVEBO is -5 V IE=-100uA, IC=0.The maximum ICBO is -50 nA VCB=-50V, IE=0.The maximum IEBO is -50 nA VEB=-5V, IC=0.The typical VCE(sat) is -0.20 and the maximum is -0.7 V at IC=-100mA, IB=-5mA.The typical VBE(sat) is -0.82 and the maximum is -1.0 V at IC=-100mA, IB=-5mA.The minimum VBE(on) is -0.6 V,the typical is -0.65 V and the maximum is -0.75 V at VCE=-5V, IC=-2mA.The minimum hFE is 100,the typical is 200 and the maximum is 600 at VCE=-5V, IC=-1mA.The minimum fT is 100 MHz and the typical is 190 MHz at VCE=-5V, IC=-10mA.The typical Cob is 4.5 pF and the maximum is 7 pF VCB=-10V, f=1MHz.