Features: *Complementary to G2N4403*High Power Dissipation: 625mW at 25 *High DC Current Gain: 100-300 at 150mA*High Breakdown Voltage: 40V MinSpecifications Parameter Symbol Ratings Unit Junction Temperature TJ +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Vo...
G2N4401: Features: *Complementary to G2N4403*High Power Dissipation: 625mW at 25 *High DC Current Gain: 100-300 at 150mA*High Breakdown Voltage: 40V MinSpecifications Parameter Symbol Ratings Unit ...
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Parameter | Symbol | Ratings | Unit |
Junction Temperature | TJ | +150 | |
Storage Temperature | Tstg | -55 ~ +150 | |
Collector to Base Voltage | VCBO | 60 | V |
Collector to Emitter Voltage | VCEO | 40 | V |
Emitter to Base Voltage | VEBO | 5 | V |
Emitter to Base Voltage | IC | 600 | mA |
Emitter to Base Voltage | PD | 625 | mW |