Features: Low On-State Resistance:0.3(max)Ultra High Speed SwitchingApplicationNotebook PCsCellular and portable phonesOn-board power suppliesLi-ion battery SystemSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage ...
G152B: Features: Low On-State Resistance:0.3(max)Ultra High Speed SwitchingApplicationNotebook PCsCellular and portable phonesOn-board power suppliesLi-ion battery SystemSpecifications Param...
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Parameter |
Symbol |
Ratings |
Unit |
Drain-Source Voltage |
VDS |
-20 |
V |
Gate-Source Voltage |
VGS |
±12 |
V |
Continuous Drain Current3 |
ID |
-0.7 |
A |
Pulsed Drain Current1,2 |
IDM |
-2.8 |
A |
Power Dissipation |
PD @TA=25 |
0.5 |
W |
Linear Derating Factor |
0.01 |
W/ | |
Operating Junction and Storage Temperature Range |
Tj, Tstg |
-55 ~ +150 |
The G152B provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.