Features: *Simple Drive Requirement*Small Package Outline*RoHS CompliantSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3, VGS@10V ID@TA=25 640 mA Continuou...
G111K: Features: *Simple Drive Requirement*Small Package Outline*RoHS CompliantSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 55 V Gate-Source Voltage ...
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Parameter |
Symbol |
Ratings |
Unit |
Drain-Source Voltage |
VDS |
55 |
V |
Gate-Source Voltage |
VGS |
±20 |
V |
Continuous Drain Current3, VGS@10V |
ID@TA=25 |
640 |
mA |
Continuous Drain Current3, VGS@10V |
ID@TA=70 |
500 |
mA |
Pulsed Drain Current1,2 |
IDM |
950 |
mA |
Power Dissipation |
PD@TA=25 |
1.38 |
W |
Linear Derating Factor |
0.01 |
W/ | |
Operating Junction and Storage Temperature Range |
Tj, Tstg |
-55 ~ +150 |
The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The G111K is universally used for all commercial-industrial applications