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Features: * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A* 6 Amps continuous current (Up to 20 Amps peak )* High gain and very low saturation voltageSpecifications Part Number FZT968 Product Type PNP VCEO(V) -12 IC (A) -6 ICM (A) -20 PD (W) 3 hFE Min...

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SeekIC No. : 004346055 Detail

FZT968: Features: * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A* 6 Amps continuous current (Up to 20 Amps peak )* High gain and very low saturation voltageSpecifications Part Number FZ...

FZT968 Data Sheet

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Part Number:: FZT968
Supply Ability:: 5000

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1~5000

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Upload time: 2025/3/13

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FZT948 evaluate
Features: * Extremely low equivalent on-resistance; RCE(sat)* 6 Amps continuous current* Up to 20 ...
FZT948TA evaluate
US $.42 - .61 / Piece

Transistors Bipolar (BJT) PNP HighCt Low Sat
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US $.26 - .3 / Piece

Transistors Bipolar (BJT) PNP HighCt Low Sat

Product Details

Description

Features:

* Extremely low equivalent on-resistance; R_CE(sat) 44m at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage

Specifications

Part Number	FZT968
Product Type	PNP
V_CEO(V)	-12
I_C (A)	-6
I_CM (A)	-20
P_D (W)	3
h_FE Min	300 200
h_FE Max	1000
@ I_C (A)	-0.5 -5
V_{CE (SAT)} Max (mV)	-130 -450
@ I_C (A)	-0.5 -6
@ I_B (mA)	-5 -250
f_T Min (MHz)	80
R_{CE (SAT)} (m)	44

PARAMETER	SYMBOL	VALUE	UNIT
Collector-Base Voltage	V_CBO	-15	V
Collector-Emitter Voltage	V_CEO	-12	V
Emitter-Base Voltage	V_EBO	-6	V
Peak Pulse Current	I_CM	-20	A
Continuous Collector Current	I_C	-6	A
Power Dissipation at Tamb=25°C	P_tot	-3	W
Operating and Storage Temperature Range	T_j:T_stg	-55 to +150	°C

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FZT968

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