IGBT Modules 1600V 800A SINGLE
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Product : | IGBT Silicon Modules | Configuration : | Dual Common Emitter Common Gate |
Collector- Emitter Voltage VCEO Max : | 1600 V | Collector-Emitter Saturation Voltage : | 3.3 V |
Continuous Collector Current at 25 C : | 800 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 6.25 KW | Maximum Operating Temperature : | + 125 C |
Package / Case : | IHM130 |