IGBT Modules 1200V 800A SINGLE
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Product : | IGBT Silicon Modules | Configuration : | Dual Common Emitter Common Gate |
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 2.1 V |
Continuous Collector Current at 25 C : | 1300 A | Gate-Emitter Leakage Current : | 600 nA |
Power Dissipation : | 5 KW | Maximum Operating Temperature : | + 125 C |
Package / Case : | IHM130 |