IGBT Transistors 1200V 1600A SINGLE
FZ1600R12KE3: IGBT Transistors 1200V 1600A SINGLE
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Configuration : | Dual Common Emitter Common Gate | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 1.7 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 1600 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 7.8 KW | Maximum Operating Temperature : | + 125 C |
Package / Case : | IHM 130X140-7 |