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FX851

Features: · Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates highdensity mounting.· The FX851 is formed with 2 chips, one being equivalent to the 2SJ187 ...

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SeekIC No. : 004345835 Detail

FX851: Features: · Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Faci...

FX851 Data Sheet

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Part Number:
FX851
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.

· The FX851 is formed with 2 chips, one being equivalent to the 2SJ187 and the other the SB07-03P,placed in one package.




Pinout

Connection Diagram


Specifications

Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS   -30 V
Gate-to-Source Voltage VGSS   ±15 V
Drain Current (DC) ID   -1 A
Drain Current (Pulse) IDP PW10s, duty cycle1% -4 A
Allowable Power Dissipation PD Tc=25°C 6 W
PD Mounted on ceramic board (750mm2*0.8mm) 1.5 W
Channel Temperature Tch   150  
Storage Temperature Tstg   55 to +150  
[SBD]
Repetitive Peak Reverse Voltage VRRM   30 V
Non-repetitive Peak Reverse Surge Voltage VRSM   35 V
Average Rectified Current IO   700 mA
Surge Forward Current IFSM 50Hz sine wave, 1cycle 5 A
Junction Temperature Tj   55 to +125  
Storage Temperature Tstg   55 to +125  



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