Features: · Composite type composed of tow low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive.· Facilitates high-density mounting.· Tth FX601 is formed with two chips, each being equivalent to the 2SJ316, placed in one package.· Matched pair characteristic...
FX601: Features: · Composite type composed of tow low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive.· Facilitates high-density mounting.· Tth FX601 is formed with...
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Parameter |
Symbol | Conditions | Ratings | Unit |
Drain-to-Source Voltage | VDSS | -12 | V | |
Gate-to-Source Voltage | VGSS | ±12 | V | |
Drain Current (DC) | ID | -1 | A | |
Drain Current (Pulse) | IDP | PW10s, duty cycle1% | -4 | A |
Allowable Power Dissipation | PD | Tc=25°C 1 unit | 6 | W |
PD | Mounted on ceramic board (750mm2*0.8mm) 1 unit | 1.5 | W | |
Total Dissipation |
PT |
Mounted on ceramic board (750mm2*0.8mm) |
2 |
W |
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | 55 to +150 |