Features: • This composite device allows high density mounting by incorporating two MOSFET chips in one package that feature low on-resistance, ultrahigh switching speed, and drive voltage of 4.5V.• The two chips have near characteristics, and especially suited for HDD.Pinout Specifica...
FW241: Features: • This composite device allows high density mounting by incorporating two MOSFET chips in one package that feature low on-resistance, ultrahigh switching speed, and drive voltage of ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
• This composite device allows high density mounting by incorporating two MOSFET chips in one package that feature low on-resistance, ultrahigh switching speed, and drive voltage of 4.5V.
• The two chips have near characteristics, and especially suited for HDD.
Parameter | Symbol | Conditions | Ratings | Unit |
Drain-to-Source Voltage | VDSS | 30 | V | |
Gate-to-Source Voltage | VGSS | ±20 | V | |
Drain Current (DC) | ID | 3.5 | A | |
Drain Current (Pulse) | IDP | PW10s, duty cycle1% | 14 | A |
Allowable Power Dissipation | PD | Mounted on a ceramic board (2000mm2*0.8mm)1unit | 1.4 | W |
Tc=25°C | 2.0 | W | ||
Channel Temperature | Tch | 150 | °C | |
Storage Temperature | Tstg | -55 to +150 | °C |
Absolute maximum ratings | |
---|---|
VDSS [V] | 30 |
VGSS [V] | 20 |
ID [A] | 3.5 |
PD [W] | 2
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=3.5 |
0.064 |
RDS(on) typ [] VGS=4.5V ID [A]=1.8 |
0.105 |
VGS(off) min [V] | 1.2 |
VGS(off) max [V] | 2.5 |
|yfs| typ [S] | 5.3 |
Ciss typ [pF] | 180 |
Qg typ [nC] | 5 |
f [kHz] | 200 |