IGBT Transistors Enrgy-recvry circt mod - PDP SPM
FVP12030IM3LEG1: IGBT Transistors Enrgy-recvry circt mod - PDP SPM
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Collector-Emitter Saturation Voltage : | 1.4 V | Gate-Emitter Leakage Current : | 250 uA | ||
Power Dissipation : | 117 W | Packaging : | Tray |
Technical/Catalog Information | FVP12030IM3LEG1 |
Vendor | Fairchild Semiconductor |
Category | Integrated Circuits (ICs) |
Applications | - |
Current - Supply | 100A |
Voltage - Supply | 20V |
Package / Case | VPM19-BA |
Packaging | Tray |
Operating Temperature | -20°C ~ 150°C |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FVP12030IM3LEG1 FVP12030IM3LEG1 |