DescriptionThe FU-79 is short for EM681FV16AU series which is designed as the low power, 512Kx16 SRAM device. FU-79 is fabricated by EMLSI's advanced full CMOS process technology and supports industrial temperature range and chip scale package for user flexibility of system design. It also support...
FU-79: DescriptionThe FU-79 is short for EM681FV16AU series which is designed as the low power, 512Kx16 SRAM device. FU-79 is fabricated by EMLSI's advanced full CMOS process technology and supports indust...
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The FU-79 is short for EM681FV16AU series which is designed as the low power, 512Kx16 SRAM device. FU-79 is fabricated by EMLSI's advanced full CMOS process technology and supports industrial temperature range and chip scale package for user flexibility of system design. It also supports low data retention voltage for battery back-up operation with low data retention current.
Features of the FU-79 are:(1)process technology: 0.15um full CMOS; (2)organization: 512K x 16 bit; (3)power supply voltage: 2.7V to 3.6V; (4)low data retention voltage: 1.5V (Min.); (5)three state output and TTL compatible; (6)package type: 44-TSOP2.
The absolute maximum ratings of the FU-79 can be summarized as:(1)Voltage on Any Pin Relative to Vss: -0.2 to 4.0 V;(2)Voltage on Vcc supply relative to Vss: -0.2 to 4.0 V;(3)Power Dissipation: 1.0 W;(4)Operating Temperature: -40 to 85 .
The electrical characteristics of FU-79 can be summarized as:(1)Input leakage current: -1 to 1 uA;(2)Output leakage current: -1 to 1 uA;(3)Operating power supply: 2 mA;(4)Output low voltage: 0.4 V;(5)Output high voltage: 2.2 V;(6)Standby Current (TTL): 0.5 mA;(7)Standby Current (CMOS): 2 to 15 uA. If you want to know more information about FU-79, please download the datasheet in www.seekic.com or www.chinaicmart.com .