FSYE913A0D

The Discrete Products Operation of Intersil Corporation FSYE913A0D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSYE913A0D is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSYE913A0D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET FSYE913A0D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. FSYE913A0D is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSYE913A0D can be operated directly from integrated circuits.

Reliability screening FSYE913A0D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil Corporation for any desired deviations from the data sheet.