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FSYA9250D

Features: • 17A, -200V, rDS(ON) = 0.270W• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Dose Ra...

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FSYA9250D: Features: • 17A, -200V, rDS(ON) = 0.270W• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity ...

FSYA9250D Data Sheet

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Part Number:
FSYA9250D
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Description



Features:

• 17A, -200V, rDS(ON) = 0.270W
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 12nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2


Specifications

Drain to Source Voltage VDS -200 V
Drain to Gate Voltage (RGS = 20W) VDGR -200 V
Continuous Drain Current
TC = 25oC		 ID 17 A
TC = 100oC. ID 11 A
Pulsed Drain Current IDM 51 A
Pulsed Drain Current VGS ±20 V
Maximum Power Dissipation
TC = 25oC		 PT 150 W
TC = 100oC PT 60 W
Linear Derating Factor   1.20 W/oC
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure) IAS 51 A
Continuous Source Current (Body Diode) IS 17 A
Pulsed Source Current (Body Diode) ISM 51 A
Operating and Storage Temperature TJ, TSTG -55 to 150
Lead Temperature (During Soldering) TL 300
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)		     g



Description

The Discrete Products Operation of Intersil Corporation FSYA9250D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSYA9250D is ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSYA9250D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET FSYA9250D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. FSYA9250D is specially designed and processed to be radiation tolerant. The MOSFET FSYA9250D is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.




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