Features: • 11A, 500V, rDS(ON) = 0.530• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Dose R...
FSYA450D: Features: • 11A, 500V, rDS(ON) = 0.530• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity...
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FSYA450D, FSYA450R | UNITS | ||
Drain-Source Voltage | VDS |
500 |
V |
Drain-Gate Voltage (RGS = 20k). | VDGR |
500 |
V |
Continuous Drain Current TC = 25 TC = 100 |
ID ID |
11 7 |
A A |
Pulsed Drain Current | IDM |
33 |
A |
Gate-Source Voltage | VGS |
±20 |
V |
Maximum Power Dissipation TC = 25 TC = 100 |
PT PT |
150 60 |
W W |
Linear Derating Factor |
1.20 |
W/ | |
Single Pulsed Avalanche Current,L = 100H, (See Test Figure) | IAS |
33 |
A |
Continuous Source Current (Body Diode) | IS |
11 |
A |
Pulsed Source Current (Body Diode) | ISM |
33 |
A |
Operating And Storage Temperature | TJ, TSTG |
-55 to +150 |
|
Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max |
TL |
300 |
The Discrete Products Operation of Intersil FSYA450D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSYA450D is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSYA450D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET FSYA450D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. FSYA450D is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSYA450D can be operated directly from integrated circuits.
Reliability screening FSYA450D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
Formerly available as type TA17659.