Features: • 21A, 250V, rDS(ON) = 0.150
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 12nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Specifications
|
|
FSYA254D, FSYA254R |
UNITS |
| Drain-Source Voltage |
VDS |
250 |
V |
| Drain-Gate Voltage (RGS = 20k). |
VDGR |
250 |
V |
Continuous Drain Current
TC = 25
TC = 100 |
ID
ID |
21
14 |
A
A |
| Pulsed Drain Current |
IDM |
63 |
A |
| Gate-Source Voltage |
VGS |
±20 |
V |
Maximum Power Dissipation
TC = 25
TC = 100 |
PT
PT |
150
60 |
W
W |
| Linear Derating Factor |
|
1.20 |
W/ |
| Single Pulsed Avalanche Current,L = 100H, (See Test Figure) |
IAS |
63 |
A |
| Continuous Source Current (Body Diode) |
IS |
21 |
A |
| Pulsed Source Current (Body Diode) |
ISM |
63 |
A |
| Operating And Storage Temperature |
TJ, TSTG |
-55 to +150 |
|
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max |
TL |
300 |
|
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.DescriptionThe Discrete Products Operation of Intersil FSYA254D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSYA254D is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSYA254D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET FSYA254D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. FSYA254D is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSYA254D can be operated directly from integrated circuits.
Reliability screening FSYA254D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
Formerly available as type TA17658.
FSYA254D Data Sheet
