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FSX017WF

Features: • Medium Power Output: P1dB=21.5dB (Typ.)@8.0GHz• High Power Gain: G1dB=11dB (Typ.)@8.0GHz• Hermetic Metal/Ceramic Package• Proven ReliabilitySpecifications Item Symbol Condition Rating Unit Drain-Source Voltage VDS 12 V Gate-Source Vol...

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SeekIC No. : 004344908 Detail

FSX017WF: Features: • Medium Power Output: P1dB=21.5dB (Typ.)@8.0GHz• High Power Gain: G1dB=11dB (Typ.)@8.0GHz• Hermetic Metal/Ceramic Package• Proven ReliabilitySpecifications It...

FSX017WF Data Sheet

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Part Number:
FSX017WF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Medium Power Output: P1dB=21.5dB (Typ.)@8.0GHz
• High Power Gain: G1dB=11dB (Typ.)@8.0GHz
• Hermetic Metal/Ceramic Package
• Proven Reliability


Specifications

Item Symbol Condition
Rating
Unit
Drain-Source Voltage VDS  
12
V
Gate-Source Voltage VGS  
-5
V
Total Power Dissipation Ptot Tc = 25
1.0
W
Storage Temperature Tstg  
-65 to +175
Channel Temperature Tch  
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000.
3. The operating channel temperature (Tch) should not exceed 145°C.


Description

The FSX017WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band,linear drive amplifiers or oscillators.

Fujitsu's FSX017WF stringent Quality Assurance Program assures the highest reliability and consistent performance.




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