Position: Home  > All Categories> Integrated Circuits (ICs) > FSTYC9055R

FSTYC9055R

Features: • 64A, -60V, rDS(ON) = 0.023Ω• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Typical SEE Immunity- LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V- LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bi...

product image

FSTYC9055R Picture
See larger image
SeekIC No. : 004344894 Detail

FSTYC9055R: Features: • 64A, -60V, rDS(ON) = 0.023Ω• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Typical SEE Immunity- LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Brea...

FSTYC9055R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FSTYC9055R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 64A, -60V, rDS(ON) = 0.023Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Typical SEE Immunity
- LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V
- LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2


Specifications

                                                                                            FSTYC9055D, FSTYC9055R UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . ..VDS            -60 V
Drain to Gate Voltage (RGS = 20kΩ) . . . . .. . . . . . . . . .VDGR          -60 V
Continuous Drain Current
TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . ID            64 A
TC = 100 . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . .. . ID             41 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . .IDM            192 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . .VGS           ±20 V
Maximum Power Dissipatio
TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . .. . PT            162 W
TC = 100 . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . .. . PT              65 W
Linear Derating Factor . . . . . . . . . . . . . . . 1.30 W/
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . IAS  192 A
Continuous Source Current (Body Diode) . . . . . . . . .  . . . . . . .. . IS         64 A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . .. ISM        192 A
Operating and Storage Temperature . . . . . . .. . . ..TJ, TSTG            - 55 to 150
Lead Temperature (During Soldering) . . . . . . . .  . . . . . .. . TL              300
(Distance >0.063in (1.6mm) from Case, 10s Max)


Description

The Discrete Products Operation of Intersil FSTYC9055R has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with100K RADs of total dose hardness to provide devices, FSTYC9055R is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSTYC9055R includes N-Channel and P-Channel devices in avariety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET FSTYC9055R is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. FSTYC9055R is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSTYC9055R can be operated directly from integrated circuits.

Reliability screening FSTYC9055R is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.

Formerly available as type TA17750T.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires
821-0814-a
415-0100-150
Isolators
HCPL062N
HCPL316J
Tools
TCP202
G084SN05 V.3
Optoelectronics
SFH7770
TLP423J
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
View more