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FSS13A0D

Features: 12A, 100V, rDS(ON)= 0.170UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity for LET of 36MeV/mg/cm2with VDSup to 100% of Rated Breakdown and VGSof 10V Off-BiasDose Rate -Typi...

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SeekIC No. : 004344730 Detail

FSS13A0D: Features: 12A, 100V, rDS(ON)= 0.170UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunit...

FSS13A0D Data Sheet

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Part Number:
FSS13A0D
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

12A, 100V, rDS(ON)= 0.170
UIS Rated
Total Dose
   -Meets Pre-RAD Specifcations to 100K RAD (Si)
   -Rated to 300K RAD (Si)
Single Event
   -Safe Operating Area Curve for Single Event Effe
   -SEE Immunity for LET of 36MeV/mg/cm2 with
   VDS up to 100% of Rated Breakdown and
   VGSof 10V Off-Bias
Dose Rate
   -Typically Survives 3E9 RAD (Si)/s at 80% BVDSs
  -Typically Survives 2E12 if Current Limited to IAS
Photo Current
  -3.0nA Per-RAD (Si)/s Typically
Neutron
  -Maintain Pre-RAD Specifcations
   for 1E13 Neutrons/cm2
  -Usable to 1E14 Neutrons/cm2


Specifications

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS  = 20k . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VDGR
Continuous Drain Current
TC  = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . ..I D
TC  = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .  .VGS
Maximum Power Dissipation
TC  = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... .PT
TC  = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100H (See Test Figure). . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... .IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . .ISM
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .TJ , TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .  .TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)    


Description

The Discrete Products Operation of Intersil Corporation FSS13A0D has developed a series of Radiation Hardened MOSFETs specically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSS13A0D is ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacri?ced. The Intersil portfolio of SEGR FSS13A0D resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in avariety of voltage, current and on-resistance ratings. Numerous packaging options are also available.




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