Features: * 2A, 500V, rDS(ON) = 2.50
* Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
* Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
* Photo Current
- 8.0nA Per-RAD(Si)/s Typically
* Neutron
- Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2Pinout
Specifications FSL430D, FSL430R UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V
Drain to Gate Voltage (RGS = 20k ) . . . . . . . . . . . . . . . VDGR 500 V
Continuous Drain Current
TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . I D 2 A
TC = 100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 1 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . .. .. .. . . . IDM 6 A
Gate to Source Voltage . . . . . . . . . . . . . . . . .. . . .. . .. . VGS 20 V
Maximum Power Dissipation
TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT 25 W
TC = 100. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT 10 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/
Single Pulsed Avalanche Current, L = 100H, (See Test Figure). . . IAS 6 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . IS 2 A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . .. ISM 6 A
Operating and Storage Temperature . . . . . . . . . . .TJ , TSTG -55 to 150
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . TL 300 Description The Discrete Products Operation of Intersil FSL430D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSL430D is ideally suited to harsh space environ-ments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSL430D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available.
This MOSFET FSL430D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) struc-ture. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regula-tion, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSL430D can be operated directly from integrated circuits.
Reliability screening FSL430D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
FSL430D Data Sheet
