FSL23A4R Selling Leads, Price trend, FSL23A4R DataSheet download, circuit diagram from SeekIC.com

Features: • 5A, 250V, rDS(ON) = 0.480• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Dose Rate-...

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SeekIC No. : 004344475 Detail

FSL23A4R: Features: • 5A, 250V, rDS(ON) = 0.480• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for...

FSL23A4R Data Sheet

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Part Number:: FSL23A4R
Supply Ability:: 5000

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Upload time: 2024/11/24

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Product Details

Description

Features:

• 5A, 250V, r_DS(ON) = 0.480
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm² with V_DS up to 80% of Rated Breakdown and V_GS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
- 4.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm²
- Usable to 1E14 Neutrons/cm²

Specifications

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .. . . . . . V_DS 250 V
Drain to Gate Voltage (R_GS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . V_DGR 250 V
Continuous Drain Current
T_C = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D 5 A
T_C = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . I_D 3 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM 15 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS ±20 V
Maximum Power Dissipation
T_C = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_T25 W
T_C = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_T10 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC
Single Pulsed Avalanche Current, L = 100H, (See Test Figure). . . . . . .... . . . . . I_AS 15 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . I_S 5 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_SM 15 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG -55 to 150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . ... . . . . . . . . . . . . . . .T_L 300 oC

Description

The Discrete Products Operation of Intersil Corporation FSL23A4R has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular,is combined with 100K RADS of total dose hardness to provide devices, FSL23A4R is ideally suited to harsh space environments.The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSL23A4R includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available.

This MOSFET FSL23A4R is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.FSL23A4R is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation,switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSL23A4R can be operated directly from integrated circuits.

Reliability screening FSL23A4R is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.

FSL23A4R

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