Features: • 11A, 250V, rDS(ON) = 0.230• UIS Rated• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias&...
FSGS234R: Features: • 11A, 250V, rDS(ON) = 0.230• UIS Rated• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects...
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Drain to Source Voltage | VDS | 250 | V |
Drain to Gate Voltage (RGS = 20W) | VDGR | 250 | V |
Continuous Drain Current TC = 25oC |
ID | 11 | A |
TC = 100oC. | ID | 7 | A |
Pulsed Drain Current | IDM | 32 | A |
Pulsed Drain Current | VGS | ±30 | V |
Maximum Power Dissipation TC = 25oC |
PT | 50 | W |
TC = 100oC | PT | 20 | W |
Linear Derating Factor | 0.40 | W/oC | |
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure) | IAS | 30 | A |
Continuous Source Current (Body Diode) | IS | 11 | A |
Pulsed Source Current (Body Diode) | ISM | 32 | A |
Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
Lead Temperature (During Soldering) | TL | 300 | |
(Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) |
4.4(Typical) | g |