Features: * 18A, 250V, rDS(ON) = 0.170
* Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
* Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
* Photo Current
- 15nA Per-RAD(Si)/s Typically
* Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2Specifications FSF254D, FSF254R UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . .VDS 250 V
Drain to Gate Voltage (RGS = 20k) . . . . . .. . . VDGR 250 V
Continuous Drain Current
TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 18 A
TC = 100. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 12 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . IDM 54 A
Gate to Source Voltage . . . . . . . . . . . . . . . .. . . .VGS ±20 V
Maximum Power Dissipation
TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT 125 W
TC = 100. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT 50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . .. . 1.00 W/
Single Pulsed Avalanche Current, L = 100H, (See Test Figure). . . . . . . IAS 54 A
Continuous Source Current (Body Diode) . . . . . . IS 18 A
Pulsed Source Current (Body Diode). . . . . . . .. . . ISM 54 A
Operating and Storage Temperature . . . . . . . . . .TJ ,TSTG -55 to 150
Lead Temperature (During Soldering) . . . . . .. . . . TL 300
(Distance >0.063in (1.6mm) from Case, 10s Max)Description The Discrete Products Operation of Intersil Corporation FSF254D has developed a series of Radiation Hardened MOSFETs specif-ically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particu-lar, is combined with 100K RADS of total dose hardness to provide devices, FSF254D ideally suited to harsh space envi-ronments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSF254D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available.
This MOSFET FSF254D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) struc-ture. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regula-tion, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSF254D can be operated directly from integrated circuits.
Reliability screening FSF254D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
FSF254D Data Sheet
