Features: • 25A, 100V, rDS(ON) = 0.070
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 7.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2Specifications
|
|
FSF150D, FSF150R |
UNITS |
| Drain-Source Voltage |
VDS |
100 |
V |
| Drain-Gate Voltage (RGS = 20k). |
VDGR |
100 |
V |
Continuous Drain Current
TC = 25
TC = 100 |
ID
ID |
25 (Note 1)
20
|
A
A |
| Pulsed Drain Current |
IDM |
75 |
A |
| Gate-Source Voltage |
VGS |
±20 |
V |
Maximum Power Dissipation
TC = 25
TC = 100 |
PT
PT |
125
50 |
W
W |
| Linear Derating Factor |
|
1.00 |
W/ |
| Single Pulsed Avalanche Current,L = 100H, (See Test Figure) |
IAS |
75 |
A |
| Continuous Source Current (Body Diode) |
IS |
25 (Note 1) |
A |
| Pulsed Source Current (Body Diode) |
ISM |
75 |
A |
| Operating And Storage Temperature |
TJ, TSTG |
-55 to +150 |
|
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max |
TL |
300 |
|
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Current is limited by the package capability.
DescriptionThe Discrete Products Operation of Intersil Corporation FSF150R has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSF150R is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSF150R includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET FSF150R is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSF150R can be operated directly from integrated circuits.
Reliability screening FSF150R is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
FSF150R Data Sheet
