IGBT Transistors 600V/10A/ SPM2
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Collector- Emitter Voltage VCEO Max : | 600 V | Collector-Emitter Saturation Voltage : | 2.3 V |
Continuous Collector Current at 25 C : | 10 A | Gate-Emitter Leakage Current : | 43 W |
Power Dissipation : | 43 W | Package / Case : | SPM32-AA |
Packaging : | Tube |
Item | Symbol | Condition | Rating | Unit |
Supply Voltage | VPN |
Applied between P- NU,NV,NW | 450 |
V |
Supply Voltage (Surge) |
VPN(Surge) |
Applied between P- NU,NV,NW | 500 | V |
Collector-Emitter Voltage |
VCES |
600 | V | |
Each IGBT Collector Current | ±IC | T = 25 | 20 | A |
Each IGBT Collector Current |
±IC | T = 100 | 14 | A |
Each IGBT Collector Current (Peak) | ±ICP |
T = 25 Instantaneous Value (Pulse) |
40 | A |
Collector Dissipation | PC |
T = 25per One Chip | 58 | 8 |
Operating Junction Temperature |
TJ |
(Note 1) | -20 ~ 125 |
Technical/Catalog Information | FSBM10SM60A |
Vendor | Fairchild Semiconductor |
Category | Integrated Circuits (ICs) |
Applications | AC Motor Driver, 3 Phase |
Number of Outputs | 1 |
Voltage - Supply | 13.5 V ~ 16.5 V |
Voltage - Load | 300 V ~ 400 V |
Current - Output | 10A |
Operating Temperature | -20°C ~ 100°C |
Package / Case | SPM32AA |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FSBM10SM60A FSBM10SM60A |