FS75R12KE3

Packaging :
Configuration : Hex
Collector-Emitter Saturation Voltage : 1.7 V
Product : IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Operating Temperature : + 125 C
Gate-Emitter Leakage Current : 400 nA
Power Dissipation : 350 W
Package / Case : EconoPACK 2
Continuous Collector Current at 25 C : 105 A


Description

The FS75R12KE3 is a kind of IGBT module.

There is some information about the maximum rated values of FS75R12KE3. (1): VCES (collector emitter voltage) is 1200 V; (2): IC,nom (DC collector current) is 75 A at Tc=80; (3): IC (DC collector current) is 100 A at Tc=25; (4): ICRM (repetitive peak collector current) is 150 A at tp=1ms, Tc=80; (5): Ptot (total power dissipation) is 350 W at Tc=25; (6): VGES (gate emitter peak voltage) is ±20 V; (7): IF (DC forward current) is 75 A; (8): IFRM (repetitive peak forward current) is 150 A at tp= 1 ms; (9): VISOL (insulation test voltage) is 2.5 kV at RMS, f=5 0Hz, t=1 min.

The following is about the characteristic values of transistor inverter of FS75R12KE3. (1): the typical VCEsat (collector emitter satration voltage) is 1.7 V and the maximum is 2.1 V at VGE=15 V, Tvj=25, IC=IC,nom; (2): the minimum VGE(th) (gate threshold voltage) is 5 V, the typical is 5.8 V and the maximum is 6.5 V at VCE=VGE, Tvj=25, IC=3 mA; (3): the typical Cies (input capacitance) is 5.3 nF at f=1 MHz, Tvj=25, VCE=25 V, VGE=0 V; (4): the typical Cres (reverse transfer capacitance) is 0.2 nF at f=1 MHz, Tvj=25, VCE=25 V, VGE=0 V; (5): the maximum ICES (collector emitter cut off current) is 5 mA at VCE=1200 V, VGE=0 V, Tvj=25; (6): the maximum IGES (gate emitter leakage current) is 400 nA at VCE=0 V, VGE=0 V, Tvj=25.