FS5KM-3

DescriptionThe FS5KM-3 is a kind of Nch power MOSFET. It is widely used in motor control, lamp control, solenoid control DC-DC converter, etc. The following is about the maximum ratings of FS5KM-3(TC=25): (1)VDSS, drain-source voltage when VGS=0 V: 150 V; (2)VGSS, gate-source voltage when VDS=0 V...

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SeekIC No. : 004344187 Detail

FS5KM-3: DescriptionThe FS5KM-3 is a kind of Nch power MOSFET. It is widely used in motor control, lamp control, solenoid control DC-DC converter, etc. The following is about the maximum ratings of FS5KM-3(...

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Part Number:
FS5KM-3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Description



Description

The FS5KM-3 is a kind of Nch power MOSFET. It is widely used in motor control, lamp control, solenoid control DC-DC converter, etc.

The following is about the maximum ratings of FS5KM-3 (TC=25): (1)VDSS, drain-source voltage when VGS=0 V: 150 V; (2)VGSS, gate-source voltage when VDS=0 V: ±20 V; (3)ID, drain current: 5 A; (4)IDM, drain current (pulsed): 20 A; (5)IDA, avalanche drain current (pulsed) when L=100H: 5 A; (6)IS, source current: 5 A; (7)ISM, source current (pulsed): 20 A; (8)PD, maximum power dissipation: 20 W; (9)Tch, channel temperature: -55 to +150; (10)Tstg,storage temperature: -55 to +150; (11)Viso, isolation voltage when AC for 1 minute, terminal to case: 2000 V.

The last one is about the electrical characteristics of FS5KM-3 (Tch=25): (1)V(BR)DSS, drain-source breakdown voltage: 150 V min at ID=1 mA, VGS=0 V; (2)IGSS, gate-source leakage current: ±0.1A when VGS=±20 V, VDS=0 V; (3)IDSS, drain-source leakage current: 0.1 mA when VGS=150 V, VDS=0 V; (4)VGS(th), gate-source threshold voltage: 2.0 V min, 3.0 V typ and 4.0 V max when ID=1 mA, VDS=10 mA; (5)rDS(ON), drain-source on-state resistance: 0.28 typ and 0.38 max when ID=2 A, VGS=10 V; (6)Ciss, input capacitance: 600 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (7)Coss, output capacitance: 100 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)Crss, reverse capacitance: 30 pF typ at VDS=10 V, VGS=0 V, f=1 MHz.




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