IGBT Modules 1200V 50A 3-PHASE
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ApplicationMotor control, Lamp control, Solenoid controlDC-DC converter, etc.Specifications ...
Product : | IGBT Silicon Modules | Configuration : | Hex |
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 1.7 V |
Continuous Collector Current at 25 C : | 75 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 270 W | Maximum Operating Temperature : | + 125 C |
Package / Case : | EconoPACK 2 |