IGBT Modules 1200V 150A FL BRIDGE
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Product : | IGBT Silicon Modules | Configuration : | Hex |
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 1.7 V |
Continuous Collector Current at 25 C : | 205 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 700 W | Maximum Operating Temperature : | + 125 C |
Package / Case : | EconoPACK |
The FS150R12KE3 is a kind of IGBT module.
There is some information about the maximum rated values of FS150R12KE3. (1): VCES (collector emitter voltage) is 1200 V; (2): IC,nom (DC collector current) is 150 A at Tc=80; (3): IC (DC collector current) is 200 A at Tc=25; (4): ICRM (repetitive peak collector current) is 300 A at tp=1ms, Tc=80; (5): Ptot (total power dissipation) is 700 W at Tc=25; (6): VGES (gate emitter peak voltage) is ±20 V; (7): IF (DC forward current) is 150 A; (8): IFRM (repetitive peak forward current) is 300 A at tp= 1 ms; (9): VISOL (insulation test voltage) is 2.5 kV at RMS, f=5 0Hz, t=1 min.
The following is about the characteristic values of transistor inverter of FS150R12KE3. (1): the typical VCEsat (collector emitter satration voltage) is 1.7 V and the maximum is 2.1 V at VGE=15 V, Tvj=25, IC=IC,nom; (2): the minimum VGE(th) (gate threshold voltage) is 5 V, the typical is 5.8 V and the maximum is 6.5 V at VCE=VGE, Tvj=25, IC=6 mA; (3): the typical Cies (input capacitance) is 10.6 nF at f=1 MHz, Tvj=25, VCE=25 V, VGE=0 V; (4): the typical Cres (reverse transfer capacitance) is 0.4 nF at f=1 MHz, Tvj=25, VCE=25 V, VGE=0 V; (5): the maximum ICES (collector emitter cut off current) is 5 mA at VCE=1200 V, VGE=0 V, Tvj=25; (6): the maximum IGES (gate emitter leakage current) is 400 nA at VCE=0 V, VGE=20 V, Tvj=25.