Features: • 0.13 mm process technology• Single 1.8 V read, program and erase (1.65 V to 1.95 V)• Simultaneous Read/Write operation (Dual Bank)• FlexBankTM*1Bank A: 16 Mbit (4 Kwords ´ 8 and 32 Kwords ´ 31)Bank B: 48 Mbit (32 Kwords ´ 96)Bank C: 48 Mbit (32...
FS12DH: Features: • 0.13 mm process technology• Single 1.8 V read, program and erase (1.65 V to 1.95 V)• Simultaneous Read/Write operation (Dual Bank)• FlexBankTM*1Bank A: 16 Mbit (4...
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Parameter | Symbol | Rating | Unit | |
Min | Max | |||
Storage Temperature | Tstg | 55 | +125 | |
Ambient Temperature with Power Applied | TA | 40 | +85 | |
Voltage with Respect to Ground All inputs and I/Os pins except as noted below*1,*2 |
VIN, VOUT | 0.5 | VCCQ+0.5 | V |
Power Supply Voltage*1 | VCC | 0.5 | +2.5 | V |
I/O's Power Supply Voltage | VCCQ | 0.5 | +2.5 | V |
ACC*1,*3 | VACC | 0.5 | +10.5 | V |
*1 : Voltage is defined on the basis of VSS = GND = 0 V.
*2 : Minimum DC voltage on input or l/O pins is 0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on input or l/O pins is VCC +0.5 V. During voltage ransitions, input or I/O pins may overshoot to VCC +2.0 V for periods of up to 20 ns.
*3 : Minimum DC input voltage on ACC pin is 0.5 V. During voltage transitions, ACC pin may undershoot VSS to 2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage (VIN - VCC) does not exceed +8.0 V. Maximum DC input voltage on ACC pin is +10.5 V which may overshoot to +12.5 V for periods of up to 20 ns.
The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The MBM29BS/FS12DH offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.