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FRS9130D

Features: • 6A, -100V, RDS(on) = 0.565W• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma- Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)• Gamma...

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SeekIC No. : 004343765 Detail

FRS9130D: Features: • 6A, -100V, RDS(on) = 0.565W• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma- Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point ...

FRS9130D Data Sheet

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Part Number:
FRS9130D
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 6A, -100V, RDS(on) = 0.565W
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
   - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
   - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
   - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 1.50nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm2
   - Usable to 3E14 Neutrons/cm2


Specifications

    FRS9130D, R, H UNITS
Drain-Source Voltage VDS
-100
V
Drain-Gate Voltage (RGS = 20k). VDGR
-100
V
Continuous Drain Current
TC = +25
TC = +100
ID
ID

6
4
A
A
Pulsed Drain Current IDM
18
A
Gate-Source Voltage VGS
±20
V
Maximum Power Dissipation
TC = +25
TC = +100		 PT
PT
50
20
W
W
Derated Above +25  
0.4.
W/
Inductive Current, Clamped, L = 100H, (See Test Figure) ILM
18
A
Continuous Source Current (Body Diode) IS
6
A
Pulsed Source Current (Body Diode) ISM
18
A
Operating And Storage Temperature TJC, TSTG
-55 to +150
Lead Temperature (During Soldering)  
Distance > 0.063 in. (1.6mm) From Case, 10s Max TL
300



Description

The Intersil FRS9130D has designed a series of SECOND GENERATION hardened powerMOSFETs of both N and P channel enhancement types with ratings from 100V to500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness FRS9130D isoffered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging fromE13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with currentlimiting.

This MOSFET FRS9130D is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. FRS9130D is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRS9130D may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desireddeviations from the data sheet.




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