FRS440R

The Intersil Corporation FRS440R has designed a series of SECOND GENERATION hardened ower MOSFETs of both N and P channel enhancement types with ratings rom 100V t 500V, 1A to 60A, and on resistance as low as 25mW. Total dose ardness FRS440R is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness anging from 1E13n/cm² for 500V product to 1E14n/cm² for 100V product. Dose ate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and E12 with current limiting.

This MOSFET FRS440R is an enhancement-mode silicon-gate power field effect transistor of he vertical DMOS (VDMOS) structure. FRS440R is specially designed and processed to xhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) xposures. Design and processing efforts are also directed to enhance survival to eavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRS440R may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired eviations from the data sheet.