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FRS440H

Features: • 5A, 500V, RDS(on) = 1.420W• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma- Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)• Gamma ...

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SeekIC No. : 004343763 Detail

FRS440H: Features: • 5A, 500V, RDS(on) = 1.420W• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma- Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point S...

FRS440H Data Sheet

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Part Number:
FRS440H
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 5A, 500V, RDS(on) = 1.420W
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
   - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
   - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
   - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 12.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
   - Usable to 3E13 Neutrons/cm2


Specifications

    FRS440D, R, H UNITS
Drain-Source Voltage VDS
500
V
Drain-Gate Voltage (RGS = 20k). VDGR
500
V
Continuous Drain Current
TC = +25
TC = +100
ID
ID

5
3
A
A
Pulsed Drain Current IDM
15
A
Gate-Source Voltage VGS
±20
V
Maximum Power Dissipation
TC = +25
TC = +100		 PT
PT
75
30
W
W
Derated Above +25  
0.60
W/
Inductive Current, Clamped, L = 100H, (See Test Figure) ILM
15
A
Continuous Source Current (Body Diode) IS
2
A
Pulsed Source Current (Body Diode) ISM
15
A
Operating And Storage Temperature TJC, TSTG
-55 to +150
Lead Temperature (During Soldering)  
Distance > 0.063 in. (1.6mm) From Case, 10s Max TL
300



Description

The Intersil Corporation FRS440H has designed a series of SECOND GENERATION hardened ower MOSFETs of both N and P channel enhancement types with ratings rom 100V t 500V, 1A to 60A, and on resistance as low as 25mW. Total dose ardness FRS440H is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness anging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose ate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and E12 with current limiting.

This MOSFET FRS440H is an enhancement-mode silicon-gate power field effect transistor of he vertical DMOS (VDMOS) structure. FRS440H is specially designed and processed to xhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) xposures. Design and processing efforts are also directed to enhance survival to eavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRS440H may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired eviations from the data sheet.




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