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FRS430R

Features: • 3A, 500V, RDS(on) = 2.52• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma- Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)• Gamma Do...

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SeekIC No. : 004343761 Detail

FRS430R: Features: • 3A, 500V, RDS(on) = 2.52• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma- Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Spe...

FRS430R Data Sheet

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Part Number:
FRS430R
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 3A, 500V, RDS(on) = 2.52
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
   - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
   - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
   - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 8.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
   - Usable to 3E13 Neutrons/cm2


Specifications

    FRS430D, R, H UNITS
Drain-Source Voltage VDS
500
V
Drain-Gate Voltage (RGS = 20k). VDGR
500
V
Continuous Drain Current
TC = +25
TC = +100
ID
ID

3
2
A
A
Pulsed Drain Current IDM
9
A
Gate-Source Voltage VGS
±20
V
Maximum Power Dissipation
TC = +25
TC = +100		 PT
PT
50
20
W
W
Derated Above +25  
0.40
W/
Inductive Current, Clamped, L = 100H, (See Test Figure) ILM
9
A
Continuous Source Current (Body Diode) IS
3
A
Pulsed Source Current (Body Diode) ISM
9
A
Operating And Storage Temperature TJC, TSTG
-55 to +150
Lead Temperature (During Soldering)  
Distance > 0.063 in. (1.6mm) From Case, 10s Max TL
300



Description

The Intersil Corporation FRS430R has designed a series of SECOND GENERATION hardenedpower MOSFETs of both N and P channel enhancement types with ratingsfrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness FRS430R is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.

This MOSFET FRS430R is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. FRS430R is specially designed and processed toxhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRS430R may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.




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