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FRS244H

Features: • 9A, 250V, RDS(on) = 0.415• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)• Gamma ...

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SeekIC No. : 004343744 Detail

FRS244H: Features: • 9A, 250V, RDS(on) = 0.415• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point S...

FRS244H Data Sheet

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Part Number:
FRS244H
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• 9A, 250V, RDS(on) = 0.415
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
   - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
   - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
   - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2
   - Usable to 1E14 Neutrons/cm2


Specifications

    FRS244D, R, H UNITS
Drain-Source Voltage VDS
250
V
Drain-Gate Voltage (RGS = 20k). VDGR
250
V
Continuous Drain Current
TC = +25
TC = +100
ID
ID

9
6
A
A
Pulsed Drain Current IDM
27
A
Gate-Source Voltage VGS
±20
V
Maximum Power Dissipation
TC = +25
TC = +100		 PT
PT
75
30
W
W
Derated Above +25  
0.60
W/
Inductive Current, Clamped, L = 100H, (See Test Figure) ILM
27
A
Continuous Source Current (Body Diode) IS
9
A
Pulsed Source Current (Body Diode) ISM
27
A
Operating And Storage Temperature TJC, TSTG
-55 to +150
Lead Temperature (During Soldering)  
Distance > 0.063 in. (1.6mm) From Case, 10s Max TL
300



Description

The Intersil Corporation FRS244H has designed a series of SECOND GENERATION hardenedower MOSFETs of both N and P channel enhancement types with ratingsfrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness FRS244H is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.

This MOSFET FRS244H is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. FRS244H is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toeavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRS244H may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desireddeviations from the data sheet.




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