FRM9130D

Features: • 6A, -100V, RDS(on) = 0.550• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)• Gamma...

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SeekIC No. : 004343704 Detail

FRM9130D: Features: • 6A, -100V, RDS(on) = 0.550• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point ...

floor Price/Ceiling Price

Part Number:
FRM9130D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

• 6A, -100V, RDS(on) = 0.550
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma            - Meets Pre-Rad Specifications to 100KRAD(Si)
                          - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
                          - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot     - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
                          - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 1.50nA Per-RAD(Si)/sec Typically
• Neutron          - Pre-RAD Specifications for 3E13 Neutrons/cm2
                          - Usable to 3E14 Neutrons/cm2



Specifications

    FRM9130D,R, H UNITS
Drain-Source Voltage VDS -100 V
Drain-Gate Voltage (RGS = 20k) VDGR -100 V
Continuous Drain Current
  TC = +25
  TC = +100
ID
6
4

A
A
Pulsed Drain Current IDM 18 A
Gate-Source Voltage VGS ±20 V
Maximum Power Dissipation
  TC = +25
  TC = +100
  Derated Above +25
PT
75
30
0.60

W
W
W/
Inductive Current, Clamped, L = 100H, (See Test Figure) ILM 18 A
Continuous Source Current (Body Diode) IS 6 A
Pulsed Source Current (Body Diode) ISM 18 A
Operating And Storage Temperature TJC, TSTG -55 to +150
Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max TL 300



Description

The Intersil FRM9130D has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness FRM9130D is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current
limiting.

This MOSFET FRM9130D is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. FRM9130D is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRM9130D may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.


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