Features: • 6A, -100V, RDS(on) = 0.550• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)• Gamma...
FRM9130D: Features: • 6A, -100V, RDS(on) = 0.550• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point ...
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FRM9130D,R, H | UNITS | ||
Drain-Source Voltage | VDS | -100 | V |
Drain-Gate Voltage (RGS = 20k) | VDGR | -100 | V |
Continuous Drain Current TC = +25 TC = +100 |
ID | 6 4 |
A A |
Pulsed Drain Current | IDM | 18 | A |
Gate-Source Voltage | VGS | ±20 | V |
Maximum Power Dissipation TC = +25 TC = +100 Derated Above +25 |
PT | 75 30 0.60 |
W W W/ |
Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM | 18 | A |
Continuous Source Current (Body Diode) | IS | 6 | A |
Pulsed Source Current (Body Diode) | ISM | 18 | A |
Operating And Storage Temperature | TJC, TSTG | -55 to +150 | |
Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL | 300 |